Micron Outlines DDR6, LPDDR6 and NAND Roadmap

Micron Technology presented a multigenerational roadmap for DRAM, high-bandwidth memory (HBM) and NAND, saying its research and close customer collaboration are intended to support future client and enterprise products.

The presentation highlighted upcoming DDR6 memory, which Micron says will double DDR5 bandwidth, and LPDDR6, which the headline claims will deliver 35% better power efficiency. Both are described as built on Micron’s upcoming 1δ DRAM node. The source does not provide launch dates or further technical specifications for these products.

Micron also discussed vertical integration for vHBM and G11 NAND with more than 400 layers. The source summary additionally says the company is offering 1 TB RDIMM memory modules today, though it gives no further details about availability.

Wccftech reports that Micron sees rising memory demand as AI expands. The presentation framed the roadmap around serving that demand across DRAM, HBM and NAND, but the source does not quantify expected demand or describe specific customer deployments.