Samsung’s HBM Base Die Work Could Support 2nm 5G Modem Development

Samsung’s development of high-bandwidth memory (HBM) base dies may be helping the company advance its 2nm 5G modem, according to Wccftech. The report says Samsung is shifting its M2800 modem from a 4nm process to a 2nm process.

If that transition proceeds, it would be the first time Samsung has upgraded the manufacturing process used for one of its baseband chips, the report says. It links the move to Samsung’s HBM base die work, which may have freed resources to explore manufacturing components on the 2nm node.

The report also says Samsung is reorganizing 4nm capacity for HBM base dies. That could give the company more room to develop 2nm components and potentially help it attract Qualcomm as a customer, offering Qualcomm a possible foundry alternative to TSMC. The source presents that outcome as a possibility, not a confirmed agreement.