Naura Claims Etch Breakthrough for 3D DRAM Manufacturing

Chinese semiconductor equipment maker Naura Technology Group says it has developed a two-step etch process for manufacturing 3D DRAM chips.

The company published a paper in an IEEE journal describing progress in etching uniformly across 64 layers of 3D DRAM. The work shifts the manufacturing focus toward vertical structures, addressing the horizontal constraints associated with non-EUV lithography.

3D DRAM is being developed as a next-generation memory technology intended to increase cell density beyond the limits of current DRAM designs. Naura is a major domestic supplier of semiconductor manufacturing equipment in China.

The reported process could be relevant to Chinese memory maker CXMT as it works under restrictions affecting access to EUV technology. However, the source describes Naura's claimed process and does not establish that CXMT has adopted it or that it has already overcome those restrictions.